Semiconductor device
When an interlayer film ( 22 ) is formed to have a large thickness and an electrode pad ( 11 ) is partly or wholly led out from an active region ( 16 ), an I/O region ( 15 ) can be reduced in area. Thus, it is possible to reduce an area of a semiconductor device.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | When an interlayer film ( 22 ) is formed to have a large thickness and an electrode pad ( 11 ) is partly or wholly led out from an active region ( 16 ), an I/O region ( 15 ) can be reduced in area. Thus, it is possible to reduce an area of a semiconductor device. |
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