Sputtering device and sputtering method

The invention provides a sputtering apparatus capable of preventing any non-erosive area from remaining on a target, and depositing a film of a uniform quality when performing the reactive sputtering.The sputtering apparatus 2 has at least three targets 241 arranged side by side at predetermined int...

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Bibliographische Detailangaben
Hauptverfasser:	KIYOTA JUNYA, NAKAMURA HAJIME, KOMATSU TAKASHI, GAIYOSHI CHOMEI, KOBAYASHI DAISHI, ARAI MAKOTO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides a sputtering apparatus capable of preventing any non-erosive area from remaining on a target, and depositing a film of a uniform quality when performing the reactive sputtering.The sputtering apparatus 2 has at least three targets 241 arranged side by side at predetermined intervals in a vacuum chamber 21, and AC power sources E1-E3 for alternately applying the negative potential and the positive potential or the grounding potential to each target 241, and has switches SW1-SW3 as switching means to branch at least one out of the outputs from the AC power sources E1-E3,connect it to at least two targets 241, and switch the target with the potential from the AC power source applied thereto between the targets 241 connected to the branched output.