Voltage quasi-potential conversion circuit for fast-flash memory

A voltage level converting circuit used on flash storage consists of a voltage level detector for providing a reference voltage level, two pairs of coupled PMOS transistors as one pair being connected to the first voltage and another pair being used to utilize said detector to decide bias of grid, t...

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1. Verfasser: XINZHANG,WU LIN
Format: Patent
Sprache:eng
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Zusammenfassung:A voltage level converting circuit used on flash storage consists of a voltage level detector for providing a reference voltage level, two pairs of coupled PMOS transistors as one pair being connected to the first voltage and another pair being used to utilize said detector to decide bias of grid, two pairs of coupled NMOS transistors as one pair being connected to one pair of PMOS transistors and another pair utilizing inverse amplifier to connect themselves to each other then connecting the pair to an earthing end.