Quick heat treatment method for semiconductor wafer

The provided fast heat treatment method for a semiconductor wafer comprises: cooling the inner wall of a RTP reaction chamber by a heat source and cooling system as rotation drive mechanism, loading the wafer into the chamber while reducing the chamber inner wall to a first temperature to lead the particle pollutant adhered on the chamber to move toward the cold surface near the wafer with temperature less than the first temperature; then, fast heating the wafer to a second temperature more than the first to eliminate the pollutant diffusion; rotating the wafer while heating wafer to the third temperature.