Multilevel semiconductor devices and methods of manufacturing the same

Multilevel semiconductor devices and methods of manufacturing the same

A multilevel semiconductor device and method of making the same includes a first active semiconductor structure, a first insulating layer on the first active semiconductor structure, a second active semiconductor structure on the first insulating layer and over the first active semiconductor structu...

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Bibliographische Detailangaben
1. Verfasser: LIM HYUNSEOK,PARK JISOON,KANG DONGJO,KIM JUNGWOOK,PARK INSUN,LEE HYUNSUK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A multilevel semiconductor device and method of making the same includes a first active semiconductor structure, a first insulating layer on the first active semiconductor structure, a second active semiconductor structure on the first insulating layer and over the first active semiconductor structure, a second insulating layer on the second active semiconductor structure, and a contact structure including a first ohmic contact having a vertical thickness on an upper surface of the first active semiconductor structure and a second ohmic contact of a lateral thickness on a sidewall of the second active semiconductor structure, the vertical thickness being greater than the lateral thickness.