Low-resistance tunnel magnetoresistive effect element, and manufacturing method, testing method and testing apparatus for the element

Low-resistance tunnel magnetoresistive effect element, and manufacturing method, testing method and testing apparatus for the element

A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility mu of electrons trapped due...

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1. Verfasser: SARUKI SHUNJI,INAGE KENJI,KUWASHIMA TETSUYA,KIYONO HIROSHI,TAGAMI KATSUMICHI,FUKUDA KAZUMASA,KOHNO MASAHIDE
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Zusammenfassung:A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility mu of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0