Split gate memory unit and method for manufacturing split gate memory unit array

Split gate memory unit and method for manufacturing split gate memory unit array

Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and perfor...

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Bibliographische Detailangaben
1. Verfasser: KANG SUNG-TAEG,KWON HYOK-KI,SEO BO Y.,YOON SEUNG B.,JEON HEE S.,CHOI YONG-SUK,HAN JEONG-UK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.