Growth method for gallium nitride film using multi-hole gallium nitride as substrate

Multihole GaN substrate growth method in hydride gas phase epitaxy (HVPE) gallium nitride (GaN) material. It features first making multihole GaN substrate mask, then putting mask in induction coupling plasma to proceed etching, using acid or aqueous alkali removing anode aluminium oxide to obtain multihole GaN substrate, putting above-mentioned substrate in oxide epitaxial growth reaction chamber, heating up to 750-850 degree centigrade under N2 ambience, filling NH3 to protect templet GaN layer, filling HCL to proceed GaN growth at 1000-1100 degree centigrade. The present invention only need corrosion depositing on GaN surficial metal Al layer adopting electrochemical method, to make multihole network structure use as GaN epitaxial mask, greatly simplifying photo etching making mask technology.