Lithography mask and methods for producing a lithography mask

Lithography mask for the lithographic patterning of a resist layer on a substrate having first regions, in which the lithography mask has a nontransparent layer, and second and third regions, which differ in terms of the optical thickness of the lithography mask and in which the lithography mask is...

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Bibliographische Detailangaben
1. Verfasser:	HENKEL THOMAS,KOHLE RODERICK,NOLSCHER CHRISTOPH,RENNER KERSTIN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Lithography mask for the lithographic patterning of a resist layer on a substrate having first regions, in which the lithography mask has a nontransparent layer, and second and third regions, which differ in terms of the optical thickness of the lithography mask and in which the lithography mask is at least semitransparent. The lithography mask comprises a first section having a plurality of second regions and a plurality of third regions, which are arranged alternately and surrounded by a first region, for the lithographic production of resist openings at distances which are less than a predetermined limit distance. Furthermore, the lithography mask comprises a second section having a multiplicity of third regions, each of which is surrounded by a second region surrounded by a multiply contiguous first region, for the lithographic production of resist openings at distances which are greater than a predetermined limit distance.