Method for making wear-resistant dielectric layer

Method for making wear-resistant dielectric layer

The invention firstly provides a substrate comprising plural connection pads, successively at least makes a plasma auxiliary chemical vapour deposition process to deposit a dielectric layer on the substrate surface, where the vapour deposition process is made in a high frequency-low frequency plasma...

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1. Verfasser: WEISHUN,HU LAI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description The invention firstly provides a substrate comprising plural connection pads, successively at least makes a plasma auxiliary chemical vapour deposition process to deposit a dielectric layer on the substrate surface, where the vapour deposition process is made in a high frequency-low frequency plasma alternating mode, and finally makes an anisotropic etching process to form plural openings in the dielectric layer, where these openings correspond to the connection pads and side wall of each opening is inclined outward.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for making wear-resistant dielectric layer
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