Polymer memory device formed in via opening

Polymer memory device formed in via opening

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one...

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Bibliographische Detailangaben
1. Verfasser: TRIPSAS NICHOLAS H.,BUYNOSKI MATTHEW,PANGRLE SUZETTE K.,OKOROANYANWU UZODINMA,HUI ANGELA T.,SUBRAMANIAN RAMKUMAR,LOPATIN SERGEY D.,NGO MINH VAN,KHATHURIA ASHOK M.,CHANG MARK S.,OGLESBY JANE V
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.