Tft array panel and fabricating method thereof

A TFT array panel including a lower aluminum layer, an aluminum nitride layer formed on the lower aluminum layer, and an upper aluminum layer formed on the aluminum nitride layer is presented. This TFT array panel including an aluminum wiring line reduces or even prevents the formation of a hillock...

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Bibliographische Detailangaben
1. Verfasser:	BAE YANG-HO,LEE JE-HUN,CHO BEOM-SEOK,JEONG CHANG-OH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A TFT array panel including a lower aluminum layer, an aluminum nitride layer formed on the lower aluminum layer, and an upper aluminum layer formed on the aluminum nitride layer is presented. This TFT array panel including an aluminum wiring line reduces or even prevents the formation of a hillock that could create a short circuit. Also presented is a method of fabricating such TFT array panel.