Gallium nitride based ó¾-ó§ group compound semiconductor device and method of producing the same

PURPOSE:To improve efficiency of outside quantum of a light emitting element and to make a gallium nitride compound semiconductor layer side a light emitting observation surface by forming a translucent electrode formed of metal in a surface of a gallium nitride compound semiconductor layer doped wi...

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Bibliographische Detailangaben
1. Verfasser:	NAKAMURA SHUJI,YAMADA TAKAO,SENOH MASAYUKI,YAMADAMOTOKAZU,BANDO KANJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE:To improve efficiency of outside quantum of a light emitting element and to make a gallium nitride compound semiconductor layer side a light emitting observation surface by forming a translucent electrode formed of metal in a surface of a gallium nitride compound semiconductor layer doped with p-type dopant. CONSTITUTION:A wafer which is formed by laminating a buffer layer formed of GaN, an n-type GaN layer 2 and an Mg doped p-type GaN layer 3 on a sapphire substrate one by one is prepared and the n-type GaN layer 2 is exposed by etching the p-type GaN layer 3. Then, 0.03mum-thick Ni is deposited on the p-type GaN layer 3 and 0.07mum-thick Au is deposited on the Ni. Furthermore, Al is deposited also on the exposed n-type GaN layer 2. After deposition, the wafer is annealed at 500 deg.C for 10 minutes to acquire an alloy of Ni and Au and a translucent property. The wafer is cut to a chip 350mum square and is mounted on a cup-shaped lead frame as a light emitting diode.