Method for forming a titanium nitride layer and method for forming a lower electrode of a mim capacitor using the titanium nitride layer

Method for forming a titanium nitride layer and method for forming a lower electrode of a mim capacitor using the titanium nitride layer

A method is provided for forming a titanium nitride layer in a metal-insulator-metal (MIM) capacitor. The deposition of a titanium nitride layer is carried out by means of an MOCVD method using a metallo-organic material as a source gas, followed by a rapid thermal process (RTP) at a high temperatur...

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Bibliographische Detailangaben
1. Verfasser: KIM KYONG-MIN,KIM DONG-JUN,KIM BYOUNG-DONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method is provided for forming a titanium nitride layer in a metal-insulator-metal (MIM) capacitor. The deposition of a titanium nitride layer is carried out by means of an MOCVD method using a metallo-organic material as a source gas, followed by a rapid thermal process (RTP) at a high temperature. Through the RTP, impurities in the titanium nitride layer are removed and a surface area of the titanium nitride layer is increased in comparison with the titanium nitride layer before the RTP. The titanium nitride layer with increased surface area is useful for a lower electrode of a MIM capacitor.