Method for preparing LED chip with separate crystal grain vertical structure

The invention presents a tube core shape design with high luminous efficiency, which comprises: epitaxial growing on island area LED chip with discrete grain; after laser peeling, packaging discrete chip into LED with vertical structure and high luminous efficiency. Wherein, the epitaxial growth improves crystal quality and internal quantum efficiency; the shape of island area increases LED light power; the island growth benefits to release stress, reduce stress on interface between GaN and sapphire substrate and the damage and spectral shift during peeling, thereby, it can obtain LED with high performance.