Nonvolatile memory device with a floating gate comprising semiconductor nanocrystals

Nonvolatile memory device with a floating gate comprising semiconductor nanocrystals

A method of forming a field effect transistor includes forming a source region and a drain region in a semiconductor material, forming a channel region between the source region and the drain region, forming an insulating layer over the channel region, forming a floating gate layer of electrically c...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: BLACK CHARLES,GUARINI KATHRYN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a field effect transistor includes forming a source region and a drain region in a semiconductor material, forming a channel region between the source region and the drain region, forming an insulating layer over the channel region, forming a floating gate layer of electrically conducting material over the insulating layer, forming a layer of an insulating material over the floating gate layer, and forming a gate electrode overlying the layer of insulating material.