A field effect transistor arrangement and method of manufacturing a field effect transistor arrangement

Provided is a method of manufacturing a field effect transistor with an organic semiconductor, and particularly a device comprising a plurality of field effect transistors with an interconnect structure. Herein, use is made of three photolithographical masks for four layers. Thereto, the transistor is provided in a top-gate structure, and the organic semiconductor layer ( 307 ) and the dielectric layer ( 309 ) are structure and patterned together. The semiconductor layer ( 307 ) and the dielectric layer ( 309 ) may be removed from areas not associated with field effect transistors ( 300 ) or with crossing conductors of the first and second conductor layer ( 303, 305, 501 ).