Non-volatile memory structure and method for manufacturing same

The non-volatile memory comprises a base; a plurality of grid structures comprised at least a bottom dielectric layer, a charge injection layer, a top dielectric layer, a control grid, and top cover layer; a plurality of selective rid structures comprised base of at least as selective dielectric layer and selective grid and arranged on one side of grid structures respectively to make them in series and form storage unit sequence; a gap wall arranged between grid structure and selective grid; and source/drain zones in bases on two sides of storage unit sequence.