Organic thin film transistor and substrate including the same
An organic thin film transistor includes a gate electrode having a first thickness on a substrate; an organic insulating layer on the gate electrode and the substrate, a portion of the organic insulating layer on the substrate having a second thickness, and a portion of the organic insulating layer...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An organic thin film transistor includes a gate electrode having a first thickness on a substrate; an organic insulating layer on the gate electrode and the substrate, a portion of the organic insulating layer on the substrate having a second thickness, and a portion of the organic insulating layer on the gate electrode having a third thickness of about 2000 to 5000 ; a semiconductor layer on the organic insulating layer; and source and drain electrodes on the organic insulating layer and contacting both side portions of the semiconductor layer. |
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