Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same

Top anti-reflective coating composition (A) comprises a top anti-reflective coating polymer (I), a photoacid generator (II) and an organic solvent (III). Top anti-reflective coating composition (A) comprises a top anti-reflective coating polymer (I), a photoacid generator of formula (II) (where n is...

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Bibliographische Detailangaben
1. Verfasser:	JUNG JAE C.,BOK CHEOL K.,KIM SAM Y.,LIM CHANG M.,MOON SEUNG C
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Top anti-reflective coating composition (A) comprises a top anti-reflective coating polymer (I), a photoacid generator (II) and an organic solvent (III). Top anti-reflective coating composition (A) comprises a top anti-reflective coating polymer (I), a photoacid generator of formula (II) (where n is 7-25) and an organic solvent (III). An independent claim is also included for forming a pattern of a semiconductor device comprising applying a photoresist to a semiconductor substrate on which an underlying structure is formed; applying (A) to form a top anti-reflective coating; exposing the photoresist to light; and developing the photoresist to form a photoresist pattern. [Image].