Metal inserting layer in hydride gas phase epitaxial growth gallium nitride film and process for preparing the same

The invention relates to a metal plug-in layer in film of GaN and its preparation method by hydrogenide vapour phase denotation, which is characterizes in that it adopts structure of wolfram plug-in layer. In the course of preparing GaN film by HVPE, first film of wolfram is evaporated on GaN mould by electron beam, then film of GaN contimues to grow by HVPE sfter high annealing. The invention is based on the following principles: wolfram film gets aggregated under high temperature, lower GaN contacting with wolfram would get broken up to form separate cellular netted texture and make partial GaN film exposed, and due to the selectivity of HVPE GaN would grow on the lower GaN to connect and form integral GaN film. The invention decreases dislocation density of GaN and is suitable for batch process.