Method of forming a tunneling insulating layer in nonvolatile memory device
A method of forming a tunneling insulating layer having a size smaller than the size obtained by the resolution of a photolithography process is provided. The method includes the steps of forming a first insulating layer and a second insulating layer on a substrate, forming a re-flowable material la...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of forming a tunneling insulating layer having a size smaller than the size obtained by the resolution of a photolithography process is provided. The method includes the steps of forming a first insulating layer and a second insulating layer on a substrate, forming a re-flowable material layer pattern to re-flow the re-flowable material layer pattern, removing the second insulating layer and the first insulating layer to expose the substrate, and forming a tunneling insulating layer. |
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