Solid-state imaging device and method for manufacturing the same

A solid-state imaging device is provided, including: a semiconductor substrate; a photoelectric conversion portion formed in the semiconductor substrate; a gate insulation film formed on the semiconductor substrate so as to cover the photoelectric conversion portion; and a plurality of transfer gate electrodes that transfer charges generated at the photoelectric conversion portion in a vertical direction, the plurality of transfer gate electrodes being formed on the gate insulation film and being mutually insulated by silicon oxide films. The plurality of transfer gate electrodes include an impurity-doped amorphous silicon film or a poly-silicon film, and the gate insulation film has a multilayer configuration including a layer made of a material more resistant to oxidizing than silicon nitride, or has a single-layer configuration made of a material more resistant to oxidizing than silicon nitride.