Slurry composition for secondary polishing of silicon wafer

Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2~10 weight % of colloidal silica having an average particle size of 30~80 nm; 0.5~1.5 % by weight of ammonia; 0.2~1 weight % of a hydroxyalkycellulose-based polymer for modifying rheology of the composition; 0.0...

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Bibliographische Detailangaben
1. Verfasser:	ROH HYUN SOO,PARK TAE WON,LEE KILL SUNG,LEE IN KYUNG
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOTECHNOLOGY NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2~10 weight % of colloidal silica having an average particle size of 30~80 nm; 0.5~1.5 % by weight of ammonia; 0.2~1 weight % of a hydroxyalkycellulose-based polymer for modifying rheology of the composition; 0.03~0.5 weight % of a polyoxyethylenealkylamine ether-based nonionic surfactant; 0.01~1 weight % of a quaternary ammonium base and the balance of deionized water.