Resist composition

A resist composition which can easily form a resist pattern excellent in transparency for vacuum ultraviolet rays such as an F2 excimer laser or the like and dry etching characteristics and further excellent in sensitivity, resolution, flatness, thermal resistance and the like, is provided. The resi...

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Bibliographische Detailangaben
1. Verfasser: KAWAGUCHI YASUHIDE,KANEKO ISAMU,TAKEBE YOKO,OKADASHINJI,YOKOKOJI OSAMU
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A resist composition which can easily form a resist pattern excellent in transparency for vacuum ultraviolet rays such as an F2 excimer laser or the like and dry etching characteristics and further excellent in sensitivity, resolution, flatness, thermal resistance and the like, is provided. The resist composition, characterized by comprising (A) a fluorine-containing polymer having an acidic group blocked with a blocking group containing a cycloalkyl group, an organic group having one or more of cycloalkyl groups, a bicycloalkyl group or the like, (B) an acid generating compound capable of generating an acid by irradiation with a light, and (C) an organic solvent.