Semiconductor device having a U-shaped gate structure

Semiconductor device having a U-shaped gate structure

A method of forming a semiconductor device includes forming a fin on an insulating layer, where the fin includes a number of side surfaces, a top surface and a bottom surface. The method also includes forming a gate on the insulating layer, where the gate has a substantially U-shaped cross-section a...

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Bibliographische Detailangaben
1. Verfasser: YU BIN,AHMED SHIBLY S.,AN JUDY XILIN,DAKSHINA-MURTHY SRIKANTESWARA,KRIVOKAPIC ZORAN,WANG HAIHONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of forming a semiconductor device includes forming a fin on an insulating layer, where the fin includes a number of side surfaces, a top surface and a bottom surface. The method also includes forming a gate on the insulating layer, where the gate has a substantially U-shaped cross-section at a channel region of the semiconductor device.