Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer

An apparatus for generating a fluid meniscus to be formed on a surface of a substrate is provided including a housing where the housing includes a housing surface to be placed proximate to a substrate surface of the substrate. The housing further includes a process configuration receiving region tha...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	RAVKIN MICHAEL,SMITH MICHAEL G.,DE LARIOS JOHN M.,REDEKER FRITZ,KOROLIK MIKHAIL,DIPIETRO CHRISTIAN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	An apparatus for generating a fluid meniscus to be formed on a surface of a substrate is provided including a housing where the housing includes a housing surface to be placed proximate to a substrate surface of the substrate. The housing further includes a process configuration receiving region that is surrounded by the housing surface. The apparatus also includes a process configuration insert which has an insert surface where the process configuration insert is defined to fit within the process configuration receiving region of the housing such that the insert surface and the housing surface define a proximity face that can be placed proximate to the substrate surface of the substrate.