Method for microstructuring by means of locally selective sublimation

A film carrier (1) of temperature-resistant material is completely surface-coated with emission material, then placed in a vacuum chamber, closely adjacent to and parallel with, a substrate (3). The coated side of the carrier faces the substrate. The carrier is then heated on its non-coated side. He...

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Bibliographische Detailangaben
1. Verfasser: BECKER EIKE,HEITHECKER DIRK,METZDORF DIRK,JOHANNES HANS HERMANN,DOBBERTIN THOMAS,SCHNEIDER DANIEL,KOWALSKY WOLFGANG
Format: Patent
Sprache:eng
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Zusammenfassung:A film carrier (1) of temperature-resistant material is completely surface-coated with emission material, then placed in a vacuum chamber, closely adjacent to and parallel with, a substrate (3). The coated side of the carrier faces the substrate. The carrier is then heated on its non-coated side. Heating is confined to those locations corresponding with the pattern or image to be produced on the substrate. A film carrier (1) of temperature-resistant material is completely surface-coated with emission material, then placed in a vacuum chamber, closely adjacent to and parallel with, a substrate (3). The coated side of the carrier faces the substrate. The carrier is then heated briefly on its non-coated side. Heating is confined to those locations corresponding with the pattern or image to be produced on the substrate. The temperature reached, is sufficient to cause sublimation of the emission material.