Method for implanting ions in semiconductor device

PROBLEM TO BE SOLVED: To provide a method for implanting ions into a semiconductor board which method compensates a threshold voltage gap between the central portion and the peripheral portion of the board created, as a result of uniformly implanting ions into the entire surface of the board, and to...

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Bibliographische Detailangaben
1. Verfasser: SOHN YONG-SUN,JIN SEUNG-WOO,LEE MIN-YONG,ROUH KYOUNG-BONG
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for implanting ions into a semiconductor board which method compensates a threshold voltage gap between the central portion and the peripheral portion of the board created, as a result of uniformly implanting ions into the entire surface of the board, and to provide a manufacturing method for a semiconductor element which the manufacturing method improvesthe nonuniformity of transistor characteristics in the board.