Press pack power semiconductor module

A high-power press pack semiconductor module comprises base plate and/or top plate made of metal matrix composite material whose coefficient of thermal expansion matches that of a semiconductor material. The composite material contains an alloy-forming material. A high-power press pack semiconductor module comprises an electrically conducting base plate (4); at least one electrically conducting top plate (3); at least one semiconductor chip (2) including semiconductor material, a first main electrode that makes contact with the base plate, and a second main electrode that makes contact with the top plate; and a housing (11, 12, 13) containing the base and top plates and semiconductor plate. A material is provided adjacent at least one of the first or second main electrodes that, together with the semiconductor material, forms in a hotspot an eutectic alloy or an alloy whose melting point is below that of the semiconductor material. At least one of the base plate or top plate is made of metal matrix composite material whose coefficient of thermal expansion matches that of the semiconductor material. The composite material contains the alloy-forming material.