Mask with two-way alignment pattern
The disclosed mask comprises a layout pattern area and an external pattern area in periphery of the layout pattern area. There are multiple bi-directional alignment patterns composed of stagger arranged several horizontal pattern groups and several vertical pattern groups on external pattern area. I...
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| creator | QINGXIANG ZHANG MINGREN ZHENG |
| description | The disclosed mask comprises a layout pattern area and an external pattern area in periphery of the layout pattern area. There are multiple bi-directional alignment patterns composed of stagger arranged several horizontal pattern groups and several vertical pattern groups on external pattern area. In carrying out multiple alignments, the invention improves aligned angle, reduces losing effect caused by using multiple alignment, and saves space of aligned mark in chip streets. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1677616A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1677616A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1677616A3</originalsourceid><addsrcrecordid>eNrjZFD2TSzOVijPLMlQKCnP1y1PrFRIzMlMz8tNzStRKEgsKUktyuNhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfHOfoZm5uZmhmaOxoRVAABKiyWn</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Mask with two-way alignment pattern</title><source>esp@cenet</source><creator>QINGXIANG ZHANG ; MINGREN ZHENG</creator><creatorcontrib>QINGXIANG ZHANG ; MINGREN ZHENG</creatorcontrib><description>The disclosed mask comprises a layout pattern area and an external pattern area in periphery of the layout pattern area. There are multiple bi-directional alignment patterns composed of stagger arranged several horizontal pattern groups and several vertical pattern groups on external pattern area. In carrying out multiple alignments, the invention improves aligned angle, reduces losing effect caused by using multiple alignment, and saves space of aligned mark in chip streets.</description><edition>7</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051005&DB=EPODOC&CC=CN&NR=1677616A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20051005&DB=EPODOC&CC=CN&NR=1677616A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>QINGXIANG ZHANG</creatorcontrib><creatorcontrib>MINGREN ZHENG</creatorcontrib><title>Mask with two-way alignment pattern</title><description>The disclosed mask comprises a layout pattern area and an external pattern area in periphery of the layout pattern area. There are multiple bi-directional alignment patterns composed of stagger arranged several horizontal pattern groups and several vertical pattern groups on external pattern area. In carrying out multiple alignments, the invention improves aligned angle, reduces losing effect caused by using multiple alignment, and saves space of aligned mark in chip streets.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2TSzOVijPLMlQKCnP1y1PrFRIzMlMz8tNzStRKEgsKUktyuNhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfHOfoZm5uZmhmaOxoRVAABKiyWn</recordid><startdate>20051005</startdate><enddate>20051005</enddate><creator>QINGXIANG ZHANG</creator><creator>MINGREN ZHENG</creator><scope>EVB</scope></search><sort><creationdate>20051005</creationdate><title>Mask with two-way alignment pattern</title><author>QINGXIANG ZHANG ; MINGREN ZHENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1677616A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>QINGXIANG ZHANG</creatorcontrib><creatorcontrib>MINGREN ZHENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>QINGXIANG ZHANG</au><au>MINGREN ZHENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Mask with two-way alignment pattern</title><date>2005-10-05</date><risdate>2005</risdate><abstract>The disclosed mask comprises a layout pattern area and an external pattern area in periphery of the layout pattern area. There are multiple bi-directional alignment patterns composed of stagger arranged several horizontal pattern groups and several vertical pattern groups on external pattern area. In carrying out multiple alignments, the invention improves aligned angle, reduces losing effect caused by using multiple alignment, and saves space of aligned mark in chip streets.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Mask with two-way alignment pattern |
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