Mask with two-way alignment pattern

The disclosed mask comprises a layout pattern area and an external pattern area in periphery of the layout pattern area. There are multiple bi-directional alignment patterns composed of stagger arranged several horizontal pattern groups and several vertical pattern groups on external pattern area. I...

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Bibliographische Detailangaben
Hauptverfasser:	QINGXIANG ZHANG, MINGREN ZHENG
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The disclosed mask comprises a layout pattern area and an external pattern area in periphery of the layout pattern area. There are multiple bi-directional alignment patterns composed of stagger arranged several horizontal pattern groups and several vertical pattern groups on external pattern area. In carrying out multiple alignments, the invention improves aligned angle, reduces losing effect caused by using multiple alignment, and saves space of aligned mark in chip streets.