Gas preparing system and gas preparing method
The invention relates to a gas mixing preparation system, especially for growing in a carbon nanometer tube in the way of chemical vapor deposition (CVD) method. The present system contains a plurality of gas sources, providing different gases separately; a number of gas flow counters, communicated...
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| creator | QUANDE HUANG WENZHENG HUANG |
| description | The invention relates to a gas mixing preparation system, especially for growing in a carbon nanometer tube in the way of chemical vapor deposition (CVD) method. The present system contains a plurality of gas sources, providing different gases separately; a number of gas flow counters, communicated with individual gas source, to control the flow ratio of each gas stream; a gas-mixing cavity, connected to the gas flow counters by an air duct; and a gas analyzer for detecting the concentration of each component in the cavity, connected to the gas-mixing cavity; wherein the gas provided separately flowing through the air duct and the gas flow counter into the mixing cavity to mix homogeneously, then detecting the concentration of each component by the gas analyzer, from which the concentration can be controlled in the intended range via adjusting the gas flow counter. Moreover, the invention provides a gas preparation method for said system. |
| format | Patent |
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The present system contains a plurality of gas sources, providing different gases separately; a number of gas flow counters, communicated with individual gas source, to control the flow ratio of each gas stream; a gas-mixing cavity, connected to the gas flow counters by an air duct; and a gas analyzer for detecting the concentration of each component in the cavity, connected to the gas-mixing cavity; wherein the gas provided separately flowing through the air duct and the gas flow counter into the mixing cavity to mix homogeneously, then detecting the concentration of each component by the gas analyzer, from which the concentration can be controlled in the intended range via adjusting the gas flow counter. Moreover, the invention provides a gas preparation method for said system.</description><edition>7</edition><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050921&DB=EPODOC&CC=CN&NR=1670244A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050921&DB=EPODOC&CC=CN&NR=1670244A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>QUANDE HUANG</creatorcontrib><creatorcontrib>WENZHENG HUANG</creatorcontrib><title>Gas preparing system and gas preparing method</title><description>The invention relates to a gas mixing preparation system, especially for growing in a carbon nanometer tube in the way of chemical vapor deposition (CVD) method. The present system contains a plurality of gas sources, providing different gases separately; a number of gas flow counters, communicated with individual gas source, to control the flow ratio of each gas stream; a gas-mixing cavity, connected to the gas flow counters by an air duct; and a gas analyzer for detecting the concentration of each component in the cavity, connected to the gas-mixing cavity; wherein the gas provided separately flowing through the air duct and the gas flow counter into the mixing cavity to mix homogeneously, then detecting the concentration of each component by the gas analyzer, from which the concentration can be controlled in the intended range via adjusting the gas flow counter. 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The present system contains a plurality of gas sources, providing different gases separately; a number of gas flow counters, communicated with individual gas source, to control the flow ratio of each gas stream; a gas-mixing cavity, connected to the gas flow counters by an air duct; and a gas analyzer for detecting the concentration of each component in the cavity, connected to the gas-mixing cavity; wherein the gas provided separately flowing through the air duct and the gas flow counter into the mixing cavity to mix homogeneously, then detecting the concentration of each component by the gas analyzer, from which the concentration can be controlled in the intended range via adjusting the gas flow counter. Moreover, the invention provides a gas preparation method for said system.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Gas preparing system and gas preparing method |
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