Gas preparing system and gas preparing method

The invention relates to a gas mixing preparation system, especially for growing in a carbon nanometer tube in the way of chemical vapor deposition (CVD) method. The present system contains a plurality of gas sources, providing different gases separately; a number of gas flow counters, communicated...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: QUANDE HUANG, WENZHENG HUANG
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention relates to a gas mixing preparation system, especially for growing in a carbon nanometer tube in the way of chemical vapor deposition (CVD) method. The present system contains a plurality of gas sources, providing different gases separately; a number of gas flow counters, communicated with individual gas source, to control the flow ratio of each gas stream; a gas-mixing cavity, connected to the gas flow counters by an air duct; and a gas analyzer for detecting the concentration of each component in the cavity, connected to the gas-mixing cavity; wherein the gas provided separately flowing through the air duct and the gas flow counter into the mixing cavity to mix homogeneously, then detecting the concentration of each component by the gas analyzer, from which the concentration can be controlled in the intended range via adjusting the gas flow counter. Moreover, the invention provides a gas preparation method for said system.