Semiconductor device having a bond pad and manufacturing method therefor

A bond pad ( 10 ) has a probe region ( 14 ) and a wire bond region ( 12 ) that are substantially non-overlapping. In one embodiment, the bond pad ( 10 ) is connected to a final metal layer pad ( 16 ) and extends over an interconnect region ( 24 ). The bond pad ( 10 ) is formed from aluminum and the final metal layer pad ( 16 ) is formed from copper. Separating the probe region ( 14 ) from the wire bond region ( 12 ) prevents the final metal layer pad ( 16 ) from being damaged by probe testing, allowing for more reliable wire bonds. In another embodiment, the probe region ( 14 ) extends over a passivation layer ( 18 ). In an application requiring very fine pitch between bond pads, the probe regions ( 14 ) and wire bond regions ( 12 ) of a plurality of bond pads formed in a line may be staggered to increase the distance between the probe regions ( 14 ). In addition, forming the bond pads ( 10 ) over the interconnect region ( 24 ) reduces the size of the integrated circuit.