Method for forming multiwidth gap wall

The process of forming gapping walls of different widths or shapes includes the following steps: providing one substrate with several structures distributed in different regions and for forming gapping walls in the side walls; forming several dielectric layers with different etching ratio; and performing at least once etching including forming photoresist pattern to expose partial regions, selectively etching the exposed regions and eliminating photoresist after etching. The dielectric layers in different regions are etched differently and dielectric layer matter in different shapes and different layers in different regions are produced to constitute gapping walls of different widths.