Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition
PURPOSE: A photoresist stripping solution composition and a method for stripping a photoresist by using the composition are provided, to allow a modified or cured photoresist generated during a wet or dry etching process to be stripped easily at a low temperature for a short time without damaging ex...
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| creator | SONG SUNYONG KIM BYINGMUK LEE HYOJIN |
| description | PURPOSE: A photoresist stripping solution composition and a method for stripping a photoresist by using the composition are provided, to allow a modified or cured photoresist generated during a wet or dry etching process to be stripped easily at a low temperature for a short time without damaging exposed under metallic layer and oxide layer and without using an organic solvent. CONSTITUTION: The photoresist stripping solution composition comprises 5-50 wt% of an organic amine compound; 10-50 wt% of a glycol ether compound; 0-30 wt% of a water-soluble organic solvent; 0.1-10 wt% of a corrosion inhibitor; and the balance of deionized water. Preferably the organic amine compound is monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, butanolamine, butyl monoethanolamine, N-methyl ethanolamine, ethyl diethanolamine or their mixture; and the glycol ether compound is glycol ether monobutyl ether, diglycol ether monobutyl ether, triglycol ether monobutyl ether or their mixture. |
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CONSTITUTION: The photoresist stripping solution composition comprises 5-50 wt% of an organic amine compound; 10-50 wt% of a glycol ether compound; 0-30 wt% of a water-soluble organic solvent; 0.1-10 wt% of a corrosion inhibitor; and the balance of deionized water. Preferably the organic amine compound is monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, butanolamine, butyl monoethanolamine, N-methyl ethanolamine, ethyl diethanolamine or their mixture; and the glycol ether compound is glycol ether monobutyl ether, diglycol ether monobutyl ether, triglycol ether monobutyl ether or their mixture.</description><edition>7</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050209&DB=EPODOC&CC=CN&NR=1577111A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25566,76549</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050209&DB=EPODOC&CC=CN&NR=1577111A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SONG SUNYONG</creatorcontrib><creatorcontrib>KIM BYINGMUK</creatorcontrib><creatorcontrib>LEE HYOJIN</creatorcontrib><title>Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition</title><description>PURPOSE: A photoresist stripping solution composition and a method for stripping a photoresist by using the composition are provided, to allow a modified or cured photoresist generated during a wet or dry etching process to be stripped easily at a low temperature for a short time without damaging exposed under metallic layer and oxide layer and without using an organic solvent. CONSTITUTION: The photoresist stripping solution composition comprises 5-50 wt% of an organic amine compound; 10-50 wt% of a glycol ether compound; 0-30 wt% of a water-soluble organic solvent; 0.1-10 wt% of a corrosion inhibitor; and the balance of deionized water. Preferably the organic amine compound is monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, butanolamine, butyl monoethanolamine, N-methyl ethanolamine, ethyl diethanolamine or their mixture; and the glycol ether compound is glycol ether monobutyl ether, diglycol ether monobutyl ether, triglycol ether monobutyl ether or their mixture.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZKgJyMgvyS9KLc4sLlEoLinKLCjIzEtXyMksLM1MUUjOzy3IL84syczPU0jMS0FSkJtakpGfppCWX6RQgGRCaTFIsoBIM3kYWNMSc4pTeaE0N4O8m2uIs4duakF-fGpxQWJyal5qSbyzn6GpubmhoaGjMWEVAFugSZQ</recordid><startdate>20050209</startdate><enddate>20050209</enddate><creator>SONG SUNYONG</creator><creator>KIM BYINGMUK</creator><creator>LEE HYOJIN</creator><scope>EVB</scope></search><sort><creationdate>20050209</creationdate><title>Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition</title><author>SONG SUNYONG ; KIM BYINGMUK ; LEE HYOJIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1577111A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SONG SUNYONG</creatorcontrib><creatorcontrib>KIM BYINGMUK</creatorcontrib><creatorcontrib>LEE HYOJIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SONG SUNYONG</au><au>KIM BYINGMUK</au><au>LEE HYOJIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition</title><date>2005-02-09</date><risdate>2005</risdate><abstract>PURPOSE: A photoresist stripping solution composition and a method for stripping a photoresist by using the composition are provided, to allow a modified or cured photoresist generated during a wet or dry etching process to be stripped easily at a low temperature for a short time without damaging exposed under metallic layer and oxide layer and without using an organic solvent. CONSTITUTION: The photoresist stripping solution composition comprises 5-50 wt% of an organic amine compound; 10-50 wt% of a glycol ether compound; 0-30 wt% of a water-soluble organic solvent; 0.1-10 wt% of a corrosion inhibitor; and the balance of deionized water. Preferably the organic amine compound is monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, butanolamine, butyl monoethanolamine, N-methyl ethanolamine, ethyl diethanolamine or their mixture; and the glycol ether compound is glycol ether monobutyl ether, diglycol ether monobutyl ether, triglycol ether monobutyl ether or their mixture.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition |
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