Photoresist stripping liquid composition and stripping methof for photoresist using photoresist stripping liquid composition

PURPOSE: A photoresist stripping solution composition and a method for stripping a photoresist by using the composition are provided, to allow a modified or cured photoresist generated during a wet or dry etching process to be stripped easily at a low temperature for a short time without damaging exposed under metallic layer and oxide layer and without using an organic solvent. CONSTITUTION: The photoresist stripping solution composition comprises 5-50 wt% of an organic amine compound; 10-50 wt% of a glycol ether compound; 0-30 wt% of a water-soluble organic solvent; 0.1-10 wt% of a corrosion inhibitor; and the balance of deionized water. Preferably the organic amine compound is monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, butanolamine, butyl monoethanolamine, N-methyl ethanolamine, ethyl diethanolamine or their mixture; and the glycol ether compound is glycol ether monobutyl ether, diglycol ether monobutyl ether, triglycol ether monobutyl ether or their mixture.