Magnetic device with improved antiferromagnetically coupling film

The device has two ferromagnetic films antiferromagnetically coupled to one another by an antiferromagnetically coupling film located between the ferromagnetic films. The coupling film is formed of a ruthenium-iron alloy and has a hexagonal-close-packed crystalline structure. One of the ferromagneti...

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Bibliographische Detailangaben
Hauptverfasser: FULLERTON ERIC EDWARD, DOERNER MARY F
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The device has two ferromagnetic films antiferromagnetically coupled to one another by an antiferromagnetically coupling film located between the ferromagnetic films. The coupling film is formed of a ruthenium-iron alloy and has a hexagonal-close-packed crystalline structure. One of the ferromagnetic films is formed over underlayers and below the coupling film and other ferromagnetic film is formed over the coupling film. Independent claims are also included for the following: (a) a magnetoresitive spin valve sensor (b) a magnetic tunnel junction device.