Method and apparatus for improving the electrical resistance of conductive paths
依据本发明之方法及装置系可运用具有氮对钨比例低于约0.7at之氮化钨层及被形成于氮化钨层上之钨层以获得导电物质。 Methods and apparatus in accordance with the present invention may employ a layer of tungsten nitride having a ratio of nitrogen to tungsten that is below about 0.7 at and a layer of tungsten formed on the layer of tungsten nitride to obtain a...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | 依据本发明之方法及装置系可运用具有氮对钨比例低于约0.7at之氮化钨层及被形成于氮化钨层上之钨层以获得导电物质。
Methods and apparatus in accordance with the present invention may employ a layer of tungsten nitride having a ratio of nitrogen to tungsten that is below about 0.7 at and a layer of tungsten formed on the layer of tungsten nitride to obtain a conductive material. |
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