Shallow-angle interference process and apparatus for determining real-time etching rate
一种用于确定等离子体媒介蚀刻过程期间的实时蚀刻速率的工艺过程和装置。实时蚀刻速率确定包括监测由直射光束和从晶片表面反射的光束产生的干涉图样。用于记录干涉图样的观察角度几乎平行于晶片平面，并处于将被去除的层上的固定焦点处。直射光束和反射光束是在等离子体处理期间在原处生成的。 A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | 一种用于确定等离子体媒介蚀刻过程期间的实时蚀刻速率的工艺过程和装置。实时蚀刻速率确定包括监测由直射光束和从晶片表面反射的光束产生的干涉图样。用于记录干涉图样的观察角度几乎平行于晶片平面，并处于将被去除的层上的固定焦点处。直射光束和反射光束是在等离子体处理期间在原处生成的。
A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing. |
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