Making contact with the emitter contact of a semiconductor
本发明关于一半导体装置，具有一基板(8)，其加工表面(8')具有一基板法线方向；至少一第一接触点(12，16，22，24，26)以及一第二接触点(14)配置在基板上，第二接触点(14)之一接触点表面系比第一接触点(12，16，22，24，26)之一接触点表面自该基板(8)在该基板法线方向有一较大的距离；以及至少一第一(34)以及一第二(40)图样化金属平面，在其每一中至少一导体，其可被连接到至少一接触点而被形成；第二金属平面(40)系比第一金属平面(34)自基板(8)在基板法线方向有一较大的距离，第二接触点(14)系以电连接到位于其上在基板法线方向之第二金属平面(40)之一导体而无第...
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| creator | GOLLER KLAUS |
| description | 本发明关于一半导体装置，具有一基板(8)，其加工表面(8')具有一基板法线方向；至少一第一接触点(12，16，22，24，26)以及一第二接触点(14)配置在基板上，第二接触点(14)之一接触点表面系比第一接触点(12，16，22，24，26)之一接触点表面自该基板(8)在该基板法线方向有一较大的距离；以及至少一第一(34)以及一第二(40)图样化金属平面，在其每一中至少一导体，其可被连接到至少一接触点而被形成；第二金属平面(40)系比第一金属平面(34)自基板(8)在基板法线方向有一较大的距离，第二接触点(14)系以电连接到位于其上在基板法线方向之第二金属平面(40)之一导体而无第一金属平面(34)之一导体被连接在其间，以及第一接触点(12，16，22，24，26)系电连接到位于其上在基板法线方向之第一金属平面(34)之一导体。
A semiconductor device having contact surfaces of different heights electrically connected to conductors defined on one or more patterned metal planes and a method for fabricating the semiconductor device. In one embodiment, the semiconductor device comprises a substrate having a process surface; a first contact and a second contact arranged on the substrate, a second contact surface of the second contact being at a greater distance, in a substrate-normal direction, from the substrate than a first contact surface of the first contact; a first conductor disposed in a first patterned metal plane and electrically connected to the first contact surface; and a second conductor disposed in a second patterned metal plane and electrically connected to the second contact surface, wherein the second metal plane is disposed at a greater distance, in the substrate-normal direction, from the substrate than the first metal plane. |
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A semiconductor device having contact surfaces of different heights electrically connected to conductors defined on one or more patterned metal planes and a method for fabricating the semiconductor device. In one embodiment, the semiconductor device comprises a substrate having a process surface; a first contact and a second contact arranged on the substrate, a second contact surface of the second contact being at a greater distance, in a substrate-normal direction, from the substrate than a first contact surface of the first contact; a first conductor disposed in a first patterned metal plane and electrically connected to the first contact surface; and a second conductor disposed in a second patterned metal plane and electrically connected to the second contact surface, wherein the second metal plane is disposed at a greater distance, in the substrate-normal direction, from the substrate than the first metal plane.</description><edition>7</edition><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041124&DB=EPODOC&CC=CN&NR=1550038A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20041124&DB=EPODOC&CC=CN&NR=1550038A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GOLLER KLAUS</creatorcontrib><title>Making contact with the emitter contact of a semiconductor</title><description>本发明关于一半导体装置，具有一基板(8)，其加工表面(8')具有一基板法线方向；至少一第一接触点(12，16，22，24，26)以及一第二接触点(14)配置在基板上，第二接触点(14)之一接触点表面系比第一接触点(12，16，22，24，26)之一接触点表面自该基板(8)在该基板法线方向有一较大的距离；以及至少一第一(34)以及一第二(40)图样化金属平面，在其每一中至少一导体，其可被连接到至少一接触点而被形成；第二金属平面(40)系比第一金属平面(34)自基板(8)在基板法线方向有一较大的距离，第二接触点(14)系以电连接到位于其上在基板法线方向之第二金属平面(40)之一导体而无第一金属平面(34)之一导体被连接在其间，以及第一接触点(12，16，22，24，26)系电连接到位于其上在基板法线方向之第一金属平面(34)之一导体。
A semiconductor device having contact surfaces of different heights electrically connected to conductors defined on one or more patterned metal planes and a method for fabricating the semiconductor device. In one embodiment, the semiconductor device comprises a substrate having a process surface; a first contact and a second contact arranged on the substrate, a second contact surface of the second contact being at a greater distance, in a substrate-normal direction, from the substrate than a first contact surface of the first contact; a first conductor disposed in a first patterned metal plane and electrically connected to the first contact surface; and a second conductor disposed in a second patterned metal plane and electrically connected to the second contact surface, wherein the second metal plane is disposed at a greater distance, in the substrate-normal direction, from the substrate than the first metal plane.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDyTczOzEtXSM7PK0lMLlEozyzJUCjJSFVIzc0sKUktgkvkpykkKhQDRYECKaXJJflFPAysaYk5xam8UJqbQd7NNcTZQze1ID8-tbggMTk1L7Uk3tnP0NTUwMDYwtGYsAoAtQ4uJA</recordid><startdate>20041124</startdate><enddate>20041124</enddate><creator>GOLLER KLAUS</creator><scope>EVB</scope></search><sort><creationdate>20041124</creationdate><title>Making contact with the emitter contact of a semiconductor</title><author>GOLLER KLAUS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1550038A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GOLLER KLAUS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GOLLER KLAUS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Making contact with the emitter contact of a semiconductor</title><date>2004-11-24</date><risdate>2004</risdate><abstract>本发明关于一半导体装置，具有一基板(8)，其加工表面(8')具有一基板法线方向；至少一第一接触点(12，16，22，24，26)以及一第二接触点(14)配置在基板上，第二接触点(14)之一接触点表面系比第一接触点(12，16，22，24，26)之一接触点表面自该基板(8)在该基板法线方向有一较大的距离；以及至少一第一(34)以及一第二(40)图样化金属平面，在其每一中至少一导体，其可被连接到至少一接触点而被形成；第二金属平面(40)系比第一金属平面(34)自基板(8)在基板法线方向有一较大的距离，第二接触点(14)系以电连接到位于其上在基板法线方向之第二金属平面(40)之一导体而无第一金属平面(34)之一导体被连接在其间，以及第一接触点(12，16，22，24，26)系电连接到位于其上在基板法线方向之第一金属平面(34)之一导体。
A semiconductor device having contact surfaces of different heights electrically connected to conductors defined on one or more patterned metal planes and a method for fabricating the semiconductor device. In one embodiment, the semiconductor device comprises a substrate having a process surface; a first contact and a second contact arranged on the substrate, a second contact surface of the second contact being at a greater distance, in a substrate-normal direction, from the substrate than a first contact surface of the first contact; a first conductor disposed in a first patterned metal plane and electrically connected to the first contact surface; and a second conductor disposed in a second patterned metal plane and electrically connected to the second contact surface, wherein the second metal plane is disposed at a greater distance, in the substrate-normal direction, from the substrate than the first metal plane.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| title | Making contact with the emitter contact of a semiconductor |
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