Making contact with the emitter contact of a semiconductor

本发明关于一半导体装置，具有一基板(8)，其加工表面(8')具有一基板法线方向；至少一第一接触点(12，16，22，24，26)以及一第二接触点(14)配置在基板上，第二接触点(14)之一接触点表面系比第一接触点(12，16，22，24，26)之一接触点表面自该基板(8)在该基板法线方向有一较大的距离；以及至少一第一(34)以及一第二(40)图样化金属平面，在其每一中至少一导体，其可被连接到至少一接触点而被形成；第二金属平面(40)系比第一金属平面(34)自基板(8)在基板法线方向有一较大的距离，第二接触点(14)系以电连接到位于其上在基板法线方向之第二金属平面(40)之一导体而无第一金属平面(34)之一导体被连接在其间，以及第一接触点(12，16，22，24，26)系电连接到位于其上在基板法线方向之第一金属平面(34)之一导体。 A semiconductor device having contact surfaces of different heights electrically connected to conductors defined on one or more patterned metal planes and a method for fabricating the semiconductor device. In one embodiment, the semiconductor device comprises a substrate having a process surface; a first contact and a second contact arranged on the substrate, a second contact surface of the second contact being at a greater distance, in a substrate-normal direction, from the substrate than a first contact surface of the first contact; a first conductor disposed in a first patterned metal plane and electrically connected to the first contact surface; and a second conductor disposed in a second patterned metal plane and electrically connected to the second contact surface, wherein the second metal plane is disposed at a greater distance, in the substrate-normal direction, from the substrate than the first metal plane.