Silicide process using high K-dielectrics

本发明是关于一种在栅极电极(14)上形成金属硅化物(22、24)的过程中，防止该栅极电极(14)的高K值电介质层(12)热分解的方法，该方法是使用镍作为该硅化物(22、24)的金属成分。 A method for preventing the thermal decomposition of a high-K dielectric layer of a gate electrode during the formation of a metal silicide on the gate electrode by using nickel as the metal component of th...

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Bibliographische Detailangaben
1. Verfasser:	FOSTER JOHN CLAYTON,BESSER PAUL R.,KING PAUL L.,PATON ERIC N.,XIANG QI,BUYNOSKI MATTHEW S
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	本发明是关于一种在栅极电极(14)上形成金属硅化物(22、24)的过程中，防止该栅极电极(14)的高K值电介质层(12)热分解的方法，该方法是使用镍作为该硅化物(22、24)的金属成分。 A method for preventing the thermal decomposition of a high-K dielectric layer of a gate electrode during the formation of a metal silicide on the gate electrode by using nickel as the metal component of the silicide.