Heap crystal structured of gallium nitride series compound semiconductor and its manufacturing method

The method includes forming buffer layer of boron phosphite in monocrystal structure on epitoxy of substrate; forming buffer layer of III family nitride on said buffer layer of boron phosphite at low temp. continuously; under high temp, forming buffer layer of III family nitride on the said buffer layer of III family nitride prepared at low temp. The method prepares buffer structure in simple procedure and low cost. Thus, subsequent epitoxy layer will have perfective crystal structure to raise luminous efficiency, brightness and service life. 本发明涉及一种氮化镓系化合物半导体磊晶结构及其制作方法，是在基板上磊晶形成单晶结构的磷化硼缓冲层后，继续在低温下于上述单晶磷化硼缓冲层上形成III族-氮化物缓冲层，然后在高温下于上述低温下生成的III族-氮化物缓冲层上再生成一III族-氮化物缓冲层，藉此，本发明可提供一种制程简单且成本低的缓冲层结构，使其后续的磊晶层具有较完美的晶体结构，以有效达到提高元件发光效率、亮度与使用寿命等功效。