Semiconductor device and its manufacturing method
半导体器件具有绝缘膜。互连槽或过孔形成在绝缘膜中。互连图形或过孔埋置在互连槽或过孔。基本上平坦的硬掩模，形成在互连图形上，并提供有宽度比相邻互连图形之间的空间窄的开口部分，并且由相对于绝缘膜被选择性蚀刻的材料制成。 A semiconductor device has an insulating film. An interconnect groove or a via hole is formed in the insulating film. An interconnect pattern or a via hole is buried in the interconnect groove...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | 半导体器件具有绝缘膜。互连槽或过孔形成在绝缘膜中。互连图形或过孔埋置在互连槽或过孔。基本上平坦的硬掩模，形成在互连图形上，并提供有宽度比相邻互连图形之间的空间窄的开口部分，并且由相对于绝缘膜被选择性蚀刻的材料制成。
A semiconductor device has an insulating film. An interconnect groove or a via hole is formed in the insulating film. An interconnect pattern or a via hole is buried in the interconnect groove or the via hole. A substantially flat hard mask is formed on the interconnect pattern. The hard mask is provided with an opening portion having a width narrower than a space between adjacent interconnect patterns and is made of a material that is etched selectively with the insulating film. |
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