Magnetron atomisation source
为使溅射材料的利用率及磁控管溅射源的靶寿命最佳化并且同时使基片覆层具有可良好获得的分布值,在整个靶寿命期间内保持稳定地在这样的布置结构中形成一凹形的溅射面(20),即该布置结构有较小的靶-基片间距(d)并且还组合有一个用于形成磁控管电子阱的磁系统,在该磁系统中,磁控管电子阱的外磁板(3)是固定不动地安置的,而一个具有一第二外磁极部分(11)的且偏心布置的内磁极(4)是可绕溅射源的中心轴线(6)旋转地形成的。 A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-...
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Zusammenfassung: | 为使溅射材料的利用率及磁控管溅射源的靶寿命最佳化并且同时使基片覆层具有可良好获得的分布值,在整个靶寿命期间内保持稳定地在这样的布置结构中形成一凹形的溅射面(20),即该布置结构有较小的靶-基片间距(d)并且还组合有一个用于形成磁控管电子阱的磁系统,在该磁系统中,磁控管电子阱的外磁板(3)是固定不动地安置的,而一个具有一第二外磁极部分(11)的且偏心布置的内磁极(4)是可绕溅射源的中心轴线(6)旋转地形成的。
A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life, and a concave sputter face in a configuration with small target-to-workpiece distance is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is stationary and an eccentrically disposed inner pole with a second outer pole part is rotatable about the central source axis. |
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