Evaporation mask and method for manufacturing organic electroluminescent device thereby

提供了一种蒸发掩模，一种采用此蒸发掩模来制造有机场致发光器件的方法，以及用上述方法制出的有机场致发光器件。蒸发掩模由薄膜形成并通过施加张力来拉紧。蒸发掩模包括至少一个掩模单元，该掩模单元包括多个主开口和多个第一假开口，该第一假开口形成于在对蒸发掩模施加张力的方向上的最外侧主开口的附近。 An evaporation mask (20), a method of manufacturing an organic electroluminescent device using the evaporation mask, and an organic electroluminescent devic...

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Bibliographische Detailangaben
Hauptverfasser:	SHIGEMURA SAIJI, GANG CHANG HO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	提供了一种蒸发掩模，一种采用此蒸发掩模来制造有机场致发光器件的方法，以及用上述方法制出的有机场致发光器件。蒸发掩模由薄膜形成并通过施加张力来拉紧。蒸发掩模包括至少一个掩模单元，该掩模单元包括多个主开口和多个第一假开口，该第一假开口形成于在对蒸发掩模施加张力的方向上的最外侧主开口的附近。 An evaporation mask (20), a method of manufacturing an organic electroluminescent device using the evaporation mask, and an organic electroluminescent device manufactured by the method are provided. The evaporation mask is formed of a thin film and is drawn taut by application of tension. The evaporation mask includes at least one mask unit (21,21a), the mask unit including a plurality of main apertures (211), and a plurality of first dummy apertures (22) formed adjacent to outermost ones of the main apertures in a direction in which tension is applied to the evaporation mask.