Magnetoresistive memeory

一个由多个磁存储单元构成的单元阵列的引线形状(所述单元阵列由纵引线和横引线的矩阵构成)通过偏离引线的正方形横截面而得以优化，以使位于单元阵列平面内的写电流磁场分量Bx随着与交叉点的距离的增大而非常迅速地减小。 The form of leads of a cell array of a multiplicity of magnetic memory cells is optimized by deviating from a square cross section of the leads in such a way that the magnetic field component of the write currents lying in the cell array plane decreases sufficiently rapidly with increasing distance from the crossover point. The cell array is constructed from a matrix of the column leads and the row leads.