Structure comprising a barrier layer of a tungsten alloy and manufacturing method thereof

互连线结构包含具有介电层的衬底，介电层中有通道开孔；其中的开孔中有钴和/或镍底层、钴和/或镍合金阻挡层；并提供钨。 An interconnection structure comprising a substrate having a dielectric layer with a via opening therein; wherein the opening has an underlayer of cobalt and/or nickel therein, barrier layer of an alloy of cobalt and/or nickel; and tungsten i...

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Bibliographische Detailangaben
Hauptverfasser:	RANSOM CRAIG, MALHOTRA SANDRA G, PAUNOVIC MILAN, ANDRICACOS PANAYOTIS, BOETTCHER STEVEN H
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	互连线结构包含具有介电层的衬底，介电层中有通道开孔；其中的开孔中有钴和/或镍底层、钴和/或镍合金阻挡层；并提供钨。 An interconnection structure comprising a substrate having a dielectric layer with a via opening therein; wherein the opening has an underlayer of cobalt and/or nickel therein, barrier layer of an alloy of cobalt and/or nickel; and tungsten is provided.